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| STSJ25NF3LL N-CHANNEL 30V - 0.009 - 25A PowerSO-8TM LOW GATE CHARGE STripFETTM II POWER MOSFET TYPE STSJ25NF3LL s VDSS 30 V RDS(on) < 0.011 ID 25 A s s s s IMPROVED JUNCTION-CASE THERMAL RESISTANCE TYPICAL RDS(on) = 0.009 TYPICAL Qg = 21 nC CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED PowerSO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. This silicon, housed in thermally improved SO-8 package, exhibits optimal on-resistance versus gate charge trade-off plus lower Rthj-c. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs INTERNAL SCHEMATIC DIAGRAM DRAIN CONTACT ALSO ON THE BACKSIDE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C (*) Drain Current (continuous) at TA = 25C (#) Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Total Dissipation at TA = 25C (#) Value 30 30 16 25 12 16 100 70 3 (*)Value limited by wires bonding Unit V V V A A A A W W IDM (l) PTOT (q) Pulse width limited by safe operating area March 2002 1/8 STSJ25NF3LL THERMAL DATA Rthj-c Rthj-amb Tj Tstg Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max (#) Max. Operating Junction Temperature Storage Temperature 1.8 42 150 - 55 to 150 C/W C/W C C (#) When mounted on 1inch FR4 Board, 2oz of Cu, t 10 sec. ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 16V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 12.5 A Min. 1 0.009 0.011 0.011 0.013 Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 5.5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 20 1700 500 115 Max. Unit S pF pF pF 2/8 STSJ25NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 12.5 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 3) VDD = 15 V, ID = 25 A, VGS = 4.5 V Min. Typ. 47 60 21 10 8.4 28 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 24 V, ID = 12.5 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 3) Min. Typ. 34 24 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time ISD = 25 A, VGS = 0 ISD = 25 A, di/dt = 100A/s, VDD = 15 V, Tj = 150C (see test circuit, Figure 5) 40 52 2.4 Test Conditions Min. Typ. Max. 25 100 1.3 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STSJ25NF3LL Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STSJ25NF3LL Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STSJ25NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STSJ25NF3LL PowerSO-8TM MECHANICAL DATA mm. MIN. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 2.79 3.8 0.4 4.0 1.27 0.6 8 (max.) 0.14 0.015 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 0.188 0.228 0.050 0.150 0.110 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 DIM. A a1 a2 a3 b b1 C c1 D E e e3 e4 F L M S 7/8 STSJ25NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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